| PART |
Description |
Maker |
| KBL01 KBL005 KBL06 KBL10 KBL08 KBL02 |
High forward surge current capability
|
Shenzhen Ping Sheng Electronics Co., Ltd.
http://
|
| KBPC3510NW KBPC3505NW1 KBPC3502NW KBPC3504NW |
l High forward surge current capability
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| MBRS150-FL MBRS120-FL MBRS140-FL MBRS160-FL MBRS11 |
High forward surge current capabilit
|
TY Semiconductor Co., Ltd
|
| KBU6A1 |
High forward surge current capability
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| KCQ20A04 |
Similar to TO-247C(TO-3P)Case, Low Forward Voltage Drop, High Surge Current Capability
|
NIEC[Nihon Inter Electronics Corporation]
|
| XC6383C351PL XC6383A351ML XC6383A351MR XC6383A351P |
Hall Effect IC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
LEAD FREE EXT TEMP A2982 20L SOIC
XC6383
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:50V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41; Current Rating:1A
50V 1A 1N4001 (DO-41)
|
TOREX[Torex Semiconductor]
TOREX SEMICONDUCTOR LTD.
|
| P0900SDL P1500SDL P3500SDL P2600SDL P3100SDL |
High Surge Current (D-rated) SIDACtor垄莽 Device
High Surge Current (D-rated) SIDACtor庐 Device
High Surge Current (D-rated) SIDACtor? Device
|
Littelfuse
|
| X4005S8 X4005S8-1.8 X4005S8-2.7 X4005S8-2.7A X4005 |
RTC Module With CPU Supervisor 时钟模块CPU监控
DIODE, STUD 95A 400VDIODE, STUD 95A 400V; Voltage, Vrrm:400V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Cathode
MODULE DROP IN FOR XE1203 868MHZ
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):70A; Non Repetitive Forward Surge Current Max, Ifsm:1150A; Forward Voltage Max, VF:1.5V; Package/Case:DO-203AB
THYRISTOR, CAPSULE, 550A; Thyristor/Triac type:Thyristor; Voltage, Vdrm:1200V; Current, It rms:1200A; Current, Itsm:9000A; Current, Igt:250mA; Voltage, Vgt:1.65V; Case style:TO-200; Current, It av:550A; Diameter, External:41mm; RoHS Compliant: Yes
|
Intersil, Corp.
XICOR[Xicor Inc.]
|
| S1M-F |
High forward surge capability
|
Sangdest Microelectroni...
|
| 93C86 93C86-EP 93C86-ESN 93C86-IP 93C86-ISN 93C86- |
8K/16K 5.0V Microwire Serial EEPROM
16K 5.0V Microwire Serial EEPROM(4.5~5.5V,16K10M次擦写周具上掉电数据保护电路,EEPROM)
8K/16K 5.0V Microwire Serial EEPROM 8K/16K 5.0V Microwire串行EEPROM
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:400V; Forward Current Avg Rectified, IF(AV):300A; Non Repetitive Forward Surge Current Max, Ifsm:6500A; Forward Voltage Max, VF:1.4V; Package/Case:DO-205 8K/16K 5.0V Microwire串行EEPROM
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
